SS16T3G - Schottky Power Rectifier

Datasheet Summary

Features

epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount.

ON Semiconductor

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Datasheet Details

Part number	SS16T3G
Manufacturer	ON Semiconductor
File Size	146.54 KB
Description	Schottky Power Rectifier
Datasheet	SS16T3G Datasheet
Additional preview pages of the SS16T3G datasheet.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package SS16T3G, SBRA8160T3G, SBRA8160NT3G These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.

Published: Mar 23, 2020 |