SSESD11B Overview
© Semiconductor ponents Industries, LLC, 2015 September, 2015 − Rev. 1 1 Publication Order Number: SSESD11B/D SSESD11B (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current See Application Note AND8308/D for detailed explanations of...
SSESD11B Key Features
- Low Capacitance 12 pF
- Low Clamping Voltage
- Small Body Outline Dimensions: 0.60 mm x 0.30 mm
- Low Body Height: 0.3 mm
- Stand-off Voltage: 5.0 V
- Low Leakage
- Response Time is < 1 ns
- IEC61000-4-2 Level 4 ESD Protection
- IEC61000-4-4 Level 4 EFT Protection
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS