Datasheet4U Logo Datasheet4U.com

SUR180E - Switch-mode Power Rectifiers

Datasheet Summary

Features

  • 10 mjoules Avalanche Energy Guaranteed.
  • Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits.
  • Ultrafast 75 Nanosecond Recovery Time.
  • 175°C Operating Junction Temperature.
  • Low Forward Voltage.
  • Low Leakage Current.
  • High Temperature Glass Passivated Junction.
  • Reverse Voltage to 800 V.
  • These are Pb.
  • Free Devices.
  • Mechanical Characteristics:.
  • Case: Epoxy, Molded.

📥 Download Datasheet

Datasheet preview – SUR180E

Datasheet Details

Part number SUR180E
Manufacturer ON Semiconductor
File Size 82.62 KB
Description Switch-mode Power Rectifiers
Datasheet download datasheet SUR180E Datasheet
Additional preview pages of the SUR180E datasheet.

📁 Similar Datasheet

  • SUR1060 - ULTRAFAST RECTIFIER (SANGDEST)
  • SUR12060 - Ultra Fast Recovery Epitaxial Diodes (Sirectifier)
  • SUR1520 - Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes (SIRECTIFIER)
  • SUR1560 - ULTRAFAST RECTIFIER (Sangdest Microelectronics)
  • SUR1560 - Soft Recovery Behaviour Ultra Fast Recovery Epitaxial Diodes (SIRECTIFIER)
  • SUR460AX - ULTRAFAST RECTIFIERS (SANGDEST)
  • SUR481H - NPN/PNP epitaxial planar Silicon Transistor (AUK)
  • SUR482H - NPN/PNP Epitaxial Planar Silicon Transistor (AUK)
  • SUR489J - Epitaxial planar NPN silicon transistor (KODENSHI KOREA)
  • SUR490J - Epitaxial Planar type NPN Silicon Transistor (AUK)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
SUR180E Switch-mode Power Rectifiers Ultrafast “E” Series with High Reverse Energy Capability These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • 10 mjoules Avalanche Energy Guaranteed • Excellent Protection Against Voltage Transients in Switching Inductive Load Circuits • Ultrafast 75 Nanosecond Recovery Time • 175°C Operating Junction Temperature • Low Forward Voltage • Low Leakage Current • High Temperature Glass Passivated Junction • Reverse Voltage to 800 V • These are Pb−Free Devices* Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.
Published: |