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SZESD7551 Datasheet

Manufacturer: onsemi
SZESD7551 datasheet preview

Datasheet Details

Part number SZESD7551
Datasheet SZESD7551-ONSemiconductor.pdf
File Size 280.35 KB
Manufacturer onsemi
Description ESD Protection Diode
SZESD7551 page 2 SZESD7551 page 3

SZESD7551 Overview

 Semiconductor ponents Industries, LLC, 2016 1 February, 2024 − Rev. 4 Publication Order Number: ESD7551/D ESD7551, SZESD7551 (TA = 25C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current See Applicat.

SZESD7551 Key Features

  • Ultra-Low Capacitance (0.35 pF Max)
  • Low Clamping Voltage
  • Stand-off Voltage: 3.3 V
  • Low Leakage
  • Response Time is < 1 ns
  • Low Dynamic Resistance < 1 W
  • Protection for the Following Standards
  • SZESD7551MXWT5G
  • Wettable Flank Package for Optimal
  • SZ Prefix for Automotive and Other
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