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SZNUP4301MR6 - Low Capacitance Diode

Key Features

  • Low Capacitance (1.5 pf Maximum Between I/O Lines).
  • Single Package Integration Design.
  • Provides ESD Protection for JEDEC Standards JESD22 Machine Model = Class C Human Body Model = Class 3B.
  • Protection for IEC61000.
  • 4.
  • 2 (Level 4) 8.0 kV (Contact) 15 kV (Air).
  • Ensures Data Line Speed and Integrity.
  • Fewer Components and Less Board Space.
  • Direct the Transient to Either Positive Side or to the Ground.
  • SZ Prefix f.

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Full PDF Text Transcription for SZNUP4301MR6 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SZNUP4301MR6. For precise diagrams, and layout, please refer to the original PDF.

NUP4301MR6, SZNUP4301MR6 Low Capacitance Diode Array for ESD Protection in Four Data Lines SZ/NUP4301MR6T1G is a micro−integrated device designed to provide protection fo...

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1MR6T1G is a micro−integrated device designed to provide protection for sensitive components from possible harmful electrical transients; for example, ESD (electrostatic discharge). Features • Low Capacitance (1.5 pf Maximum Between I/O Lines) • Single Package Integration Design • Provides ESD Protection for JEDEC Standards JESD22 Machine Model = Class C Human Body Model = Class 3B • Protection for IEC61000−4−2 (Level 4) 8.

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