Si3443DV - P-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	Si3443DV
Manufacturer	ON Semiconductor
File Size	225.98 KB
Description	P-Channel MOSFET
Datasheet	Si3443DV Datasheet
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Product details

Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

-4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V RDS(ON) = 0.100 Ω @ VGS = -2.5 V Fast switching speed. Low gate charge (7.2nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). S D 1 D 2 G D SuperSOT TM-6 D 3 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Cont.

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Published: Mar 23, 2021 |