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Si3443DV Datasheet P-channel MOSFET

Manufacturer: onsemi

Overview: Si3443DV Si3443DV P-Channel 2.5V Specified PowerTrench MOSFET.

General Description

This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.

Applications • Load switch • Battery protection • Power management

Key Features

  • • -4 A, -20 V. RDS(ON) = 0.065 Ω @ VGS = -4.5 V RDS(ON) = 0.100 Ω @ VGS = -2.5 V • Fast switching speed. • Low gate charge (7.2nC typical). • High performance trench technology for extremely low RDS(ON). • SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). S D 1 D 2 G D SuperSOT TM-6 D 3 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Cont.

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