T60N02R
Features
62 A, 24 V, N- Channel, DPAK
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Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High- Efficiency DC- DC Converters Pb- Free Packages are Available http://onsemi.
V(BR)DSS 24 V
RDS(on) TYP 8.4 m W @ 10 V
ID MAX 62 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain- to- Source Voltage Gate- to- Source Voltage
- Continuous Thermal Resistance Junction- to- Case Total Power Dissipation @ TC = 25°C Drain Current Continuous @ TC = 25°C, Chip Continuous @ TC = 25°C, Limited by Package Continuous @ TA = 25°C, Limited by Wires Thermal Resistance Junction- to- Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current
- Continuous @ TA = 25°C Thermal Resistance Junction- to- Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current
- Continuous @ TA = 25°C Operating and Storage Temperature Single Pulse Drain- to-...
