Datasheet4U Logo Datasheet4U.com

TF256TH - N-Channel JFET

Datasheet Summary

Features

  • High gain : GV=2.7dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz).
  • Ultrasmall package facilitates miniaturization in end products.
  • Best suited for use in electret condenser microphone for audio equipments and telephones.
  • Excellent transient characteristics.
  • Adoption of FBET process.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Gate-to-Drain Voltage Gate Current Drain Current Allowable P.

📥 Download Datasheet

Datasheet preview – TF256TH

Datasheet Details

Part number TF256TH
Manufacturer ON Semiconductor
File Size 271.81 KB
Description N-Channel JFET
Datasheet download datasheet TF256TH Datasheet
Additional preview pages of the TF256TH datasheet.

📁 Similar Datasheet

  • TF256TH - N-channel Silicon Junction FET (Sanyo Semicon Device)
  • TF256 - (TF251 - TF257) 2.5A Fast Recovery Rectifier (TAITRON)
  • TF256 - N-channel Silicon Junction FET (Sanyo Semicon Device)
  • TF250TH - N-channel Silicon Junction FET (Sanyo Semicon Device)
  • TF251 - (TF251 - TF257) 2.5A Fast Recovery Rectifier (TAITRON)
  • TF252 - (TF251 - TF257) 2.5A Fast Recovery Rectifier (TAITRON)
  • TF252 - N-channel Silicon Junction FET (Sanyo Semicon Device)
  • TF252C - N-channel Silicon Junction FET (Sanyo Semicon Device)
  • TF252TH - N-channel Silicon Junction FET (Sanyo Semicon Device)
  • TF253 - (TF251 - TF257) 2.5A Fast Recovery Rectifier (TAITRON)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
Ordering number : ENA1617B TF256TH N-Channel JFET 20V, 140 to 450μA, 1.7mS, VTFP http://onsemi.com Features • High gain : GV=2.7dB typ (VCC=2V, RL=2.2kΩ, Cin=5pF, VIN=10mV, f=1kHz) • Ultrasmall package facilitates miniaturization in end products • Best suited for use in electret condenser microphone for audio equipments and telephones • Excellent transient characteristics • Adoption of FBET process • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature VGDO IG ID PD Tj Storage Temperature Tstg Conditions Ratings --20 10 1 100 150 --55 to +150 Unit V mA mA mW °C °C Stresses exceeding Maximum Ratings may damage the device.
Published: |