TIG058E8 - N-Channel IGBT

onsemi

Key Features

Low-saturation voltage.
Enhansment type.
Mounting Height 0.9mm, Mounting Area 8.12mm2.
Halogen free compliance.
Low voltage drive (4V).
Built-in Gate-to-Emitter protection diode.
dv / dt guarantee.
Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage VCES 400 V Gate-to-Emitter Voltage (DC) VGES ±6 V Gate-to-Emitter Voltage (Pulse) VGES PW≤1ms ±8.

TIG058E8 n-channel igbt by onsemi - Datasheet Preview

Datasheet Details

Part number	TIG058E8
Manufacturer	onsemi
File Size	275.23 KB
Description	N-Channel IGBT
Datasheet	TIG058E8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1381A TIG058E8 N-Channel IGBT 400V, 150A, VCE(sat);4V, Single ECH8 http://onsemi.com Features • Low-saturation voltage • Enhansment type • Mounting Height 0.9mm, Mounting Area 8.