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TIG058E8 - N-Channel IGBT

Datasheet Summary

Features

  • Low-saturation voltage.
  • Enhansment type.
  • Mounting Height 0.9mm, Mounting Area 8.12mm2.
  • Halogen free compliance.
  • Low voltage drive (4V).
  • Built-in Gate-to-Emitter protection diode.
  • dv / dt guarantee.
  • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage VCES 400 V Gate-to-Emitter Voltage (DC) VGES ±6 V Gate-to-Emitter Voltage (Pulse) VGES PW≤1ms ±8.

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Datasheet Details

Part number TIG058E8
Manufacturer ON Semiconductor
File Size 275.23 KB
Description N-Channel IGBT
Datasheet download datasheet TIG058E8 Datasheet
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Full PDF Text Transcription

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Ordering number : ENA1381A TIG058E8 N-Channel IGBT 400V, 150A, VCE(sat);4V, Single ECH8 http://onsemi.com Features • Low-saturation voltage • Enhansment type • Mounting Height 0.9mm, Mounting Area 8.
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