TIG065E8 - N-Channel IGBT

onsemi

Key Features

Low-saturation voltage.
Enhansment type.
Mounting Height 0.9mm, Mounting Area 8.12mm2.
Halogen free compliance.
Low voltage drive (2.5V).
Built-in Gate-to-Emitter protection diode.
dv / dt guarantee.
Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-E.

TIG065E8 n-channel igbt by onsemi - Datasheet Preview

Datasheet Details

Part number	TIG065E8
Manufacturer	onsemi
File Size	305.23 KB
Description	N-Channel IGBT
Datasheet	TIG065E8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1862A TIG065E8 N-Channel IGBT 400V, 150A, VCE(sat);4.2V, Single ECH8 http://onsemi.com Features • Low-saturation voltage • Enhansment type • Mounting Height 0.9mm, Mounting Area 8.12mm2 • Halogen free compliance • Low voltage drive (2.5V) • Built-in Gate-to-Emitter protection diode • dv / dt guarantee* Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt Channel Temperature VCES VGES VGES ICP dv / dt Tch PW≤1ms VGE=2.