TIP100 - Silicon NPN Transistor

onsemi

Key Features

High DC Current Gain.
hFE = 2500 (Typ) @ IC = 4.0 Adc.
Collector.
Emitter Sustaining Voltage.
@ 30 mAdc VCEO(sus) = 60 Vdc (Min).
TIP100, TIP105 = 80 Vdc (Min).
TIP101, TIP106 = 100 Vdc (Min).
TIP102, TIP107.
Low Collector.
Emitter Saturation Voltage.
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 2.5 Vdc (Max) @ IC = 8.0 Adc.
Monolithic Construction with Built.
in Base.
Emitter Shun.

TIP100 silicon npn transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	TIP100
Manufacturer	onsemi
File Size	274.78 KB
Description	Silicon NPN Transistor
Datasheet	TIP100 Datasheet

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Other Datasheets by onsemi

Part Number	Description
TIP101	Silicon NPN Transistor
TIP102	Silicon NPN Transistor
TIP105	Silicon PNP Transistor
TIP106	Silicon PNP Transistor
TIP107	Silicon PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Complementary Silicon Transistors, Plastic, Medium-Power TIP100, TIP101, TIP102 (NPN); TIP105, TIP106, TIP107 (PNP) Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105 = 80 Vdc (Min) − TIP101, TIP106 = 100 Vdc (Min) − TIP102, TIP107 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 2.5 Vdc (Max) @ IC = 8.0 Adc • Monolithic Construction with Built−in Base−Emitter Shunt Resistors • These Devices are Pb−Free and are RoHS Compliant DATA SHEET www.onsemi.com 4 1 2 3 1. Base 2. Collector 3. Emitter 4.