Datasheet4U Logo Datasheet4U.com

TIP110 - Silicon NPN Transistor

Key Features

  • High DC Current Gain.
  • hFE = 2500 (Typ) @ IC = 1.0 Adc.
  • Collector.
  • Emitter Sustaining Voltage.
  • @ 30 mAdc VCEO(sus) = 60 Vdc (Min).
  • TIP110, TIP115 = 80 Vdc (Min).
  • TIP111, TIP116 = 100 Vdc (Min).
  • TIP112, TIP117.
  • Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc.
  • Monolithic Construction with Built.
  • in Base.
  • Emitter Shunt Resistors.
  • Pb.

📥 Download Datasheet

Datasheet Details

Part number TIP110
Manufacturer onsemi
File Size 286.92 KB
Description Silicon NPN Transistor
Datasheet download datasheet TIP110 Datasheet

Full PDF Text Transcription for TIP110 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TIP110. For precise diagrams, and layout, please refer to the original PDF.

Plastic Medium-Power Complementary Silicon Transistors TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) Designed for general−purpose amplifier and low−speed swi...

View more extracted text
TIP117 (PNP) Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 1.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 60 Vdc (Min) − TIP110, TIP115 = 80 Vdc (Min) − TIP111, TIP116 = 100 Vdc (Min) − TIP112, TIP117 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Shunt Resistors • Pb−Free Packages are Available*− DATA SHEET www.onsemi.com 4 1 23 1. Base 2. Collector 3. Emitter 4.