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TIP137G - Silicon Power Transistors

Download the TIP137G datasheet PDF. This datasheet also covers the TIP131 variant, as both devices belong to the same silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High DC Current Gain.
  • hFE = 2500 (Typ) @ IC = 4.0 Adc.
  • Collector.
  • Emitter Sustaining Voltage.
  • @ 30 mAdc VCEO(sus) = 80 Vdc (Min).
  • TIP131 = 100 Vdc (Min).
  • TIP132, TIP137.
  • Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc = 3.0 Vdc (Max) @ IC = 6.0 Adc.
  • Monolithic Construction with Built.
  • In Base.
  • Emitter Shunt Resistors.
  • Pb.
  • Free Packages a.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TIP131_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TIP137G
Manufacturer onsemi
File Size 92.45 KB
Description Silicon Power Transistors
Datasheet download datasheet TIP137G Datasheet

📁 Similar Datasheet

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TIP137 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics
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TIP137 PLASTIC POWER TRANSISTORS TRANSYS
TIP137 PNP Transistor INCHANGE
TIP137 Darlington Transistors Multicomp

Other Datasheets by onsemi

Part Number Description
TIP137 Silicon Power Transistors
TIP131 Silicon Power Transistors
TIP131G Silicon Power Transistors
TIP132 Silicon Power Transistors
TIP132G Silicon Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TIP131, TIP132 (NPN), TIP137 (PNP) Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 80 Vdc (Min) − TIP131 = 100 Vdc (Min) − TIP132, TIP137 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc = 3.0 Vdc (Max) @ IC = 6.0 Adc • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available* MAXIMUM RATINGS Rating TIP132 Symbol TIP131 TIP137 Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Peak VCEO VCB VEB IC 80 100 Vdc 80 100 Vdc 5.0 Vdc 8.