TIP147 - Darlington Complementary Silicon Power Transistors

onsemi

Key Features

High DC Current Gain.
Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V.
Collector.
Emitter Sustaining Voltage.
@ 30 mA VCEO(sus) = 60 Vdc (Min).
TIP140, TIP145 = 80 Vdc (Min).
TIP141, TIP146 = 100 Vdc (Min).
TIP142, TIP147.
Monolithic Construction with Built.
In Base.
Emitter Shunt Resistor.
These are Pb.
Free Devices.

TIP147 darlington complementary silicon power transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	TIP147
Manufacturer	onsemi
File Size	267.99 KB
Description	Darlington Complementary Silicon Power Transistors
Datasheet	TIP147 Datasheet

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Other Datasheets by onsemi

Part Number	Description
TIP147G	Darlington Complementary Silicon Power Transistors
TIP140	Darlington Complementary Silicon Power Transistors
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TIP141	Darlington Complementary Silicon Power Transistors
TIP141G	Darlington Complementary Silicon Power Transistors

Full PDF Text Transcription (Reference)

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DATA SHEET www.onsemi.com Darlington Complementary Silicon Power Transistors TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.