TIP3055 - NPN Silicon Power Transistors

onsemi

Key Features

DC Current Gain.
hFE = 20 .
70 @ IC = 4.0 Adc.
Collector.
Emitter Saturation Voltage.
VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc.
Excellent Safe Operating Area.
These are Pb.
Free Devices.

TIP3055 npn silicon power transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	TIP3055
Manufacturer	onsemi
File Size	212.40 KB
Description	NPN Silicon Power Transistors
Datasheet	TIP3055 Datasheet

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Full PDF Text Transcription (Reference)

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Complementary Silicon Power Transistors TIP3055 (NPN), TIP2955 (PNP) Designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20 − 70 @ IC = 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices* MAXIMUM RATINGS Symbol Rating Value Unit VCEO VCER VCB VEB IC IB PD Collector − Emitter Voltage Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C 60 Vdc 70 Vdc 100 Vdc 7.0 Vdc 15 Adc 7.0 Adc 90 W 0.