Datasheet4U Logo Datasheet4U.com

TND314S - Excellent Power Device

Key Features

  • Dual inverter.
  • Monolithic structure (High voltage CMOS process adopted).
  • Withstand voltage of 25V is assured.
  • Wide range of operating voltage : 4.5V to 25V.
  • Peak output current : 1A.
  • Fast switching time (25ns typical at 1000pF load).
  • Fully compatible input to TTL / CMOS (VIH=up to 2.6V, at VDD=4.5 to 25V).
  • Built-in input pull-down resistance.
  • Halogen free compliance Specifications Absolute Maximum Ratings.

📥 Download Datasheet

Datasheet Details

Part number TND314S
Manufacturer onsemi
File Size 250.87 KB
Description Excellent Power Device
Datasheet download datasheet TND314S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TND314S General Purpose Driver Sanyo
TND315S General Purpose Driver Sanyo
TND316S General Purpose Driver Sanyo
TND301S General Purpose Driver for PDP Sustain Pulse Drive/ DC / AC Motor Drive/ Switching Power Supply/ and DC / DC Converter Applications Sanyo Semicon Device
TND302S General Purpose Driver for PDP Sustain Pulse Drive/ DC / AC Motor Drive/ Switching Power Supply/ and DC / DC Converter Applications Sanyo Semicon Device

Other Datasheets by onsemi

Part Number Description
TND315S Excellent Power Device
TND316S Excellent Power Device
TND301 Clock Management Design Using Low Skew and Low Jitter Devices
TND306 High-Speed CMOS Product Designation Definitions
TND307 Graphical Data Test Circuits

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number : ENA0420A TND314S Excellent Power Device Dual inverter driver for general purpose, Dual SOIC8 http://onsemi.com Features • Dual inverter • Monolithic structure (High voltage CMOS process adopted) • Withstand voltage of 25V is assured • Wide range of operating voltage : 4.5V to 25V • Peak output current : 1A • Fast switching time (25ns typical at 1000pF load) • Fully compatible input to TTL / CMOS (VIH=up to 2.6V, at VDD=4.5 to 25V) • Built-in input pull-down resistance • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Supply Voltage Input Voltage Allowable Power Dissipation Junction Temperature VDD VIN PD max Tj Storage Temperature Tstg Conditions Ratings 0 to 25 GND--0.3 to VDD+0.3 0.