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TND315S - Excellent Power Device

Key Features

  • Dual buffer.
  • Withstand voltage of 25V is assured.
  • Peak output current : 1A.
  • Fully compatible input to TTL / CMOS (VIH=up to 2.6V, at VDD=4.5 to 25V).
  • Monolithic structure (High voltage CMOS process adopted).
  • Wide range of operating voltage : 4.5V to 25V.
  • Fast switching time (30ns typical at 1000pF load).
  • Built-in input pull-down resistance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Supply Volta.

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Datasheet Details

Part number TND315S
Manufacturer onsemi
File Size 243.21 KB
Description Excellent Power Device
Datasheet download datasheet TND315S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA0421A TND315S Excellent Power Device Dual buffer driver for general purpose, Dual SOIC8 http://onsemi.com Features • Dual buffer • Withstand voltage of 25V is assured • Peak output current : 1A • Fully compatible input to TTL / CMOS (VIH=up to 2.6V, at VDD=4.5 to 25V) • Monolithic structure (High voltage CMOS process adopted) • Wide range of operating voltage : 4.5V to 25V • Fast switching time (30ns typical at 1000pF load) • Built-in input pull-down resistance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Supply Voltage Input Voltage Allowable Power Dissipation Junction Temperature VDD VIN PD max Tj Storage Temperature Tstg Conditions Ratings 0 to 25 GND --0.3 to VDD+0.3 0.