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TND321VD - Excellent Power Device

Key Features

  • Dual inverter.
  • Monolithic structure (High voltage CMOS process adopted).
  • Withstand voltage of 25V is assured.
  • Wide range of operating voltage : 4.5V to 25V.
  • Peak output current : IO+/IO.
  • =0.8A /1A.
  • Fast switching time (30ns typical at 1000pF load).
  • Fully compatible input to TTL / CMOS (VIH=up to 2.6V, at VDD=4.5 to 25V).
  • Built-in input pull-down resistance Specifications Absolute Maximum Rat.

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Datasheet Details

Part number TND321VD
Manufacturer onsemi
File Size 288.54 KB
Description Excellent Power Device
Datasheet download datasheet TND321VD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TND321VD Excellent Power Device Dual inverter driver for general purpose www.onsemi.com Features • Dual inverter • Monolithic structure (High voltage CMOS process adopted) • Withstand voltage of 25V is assured • Wide range of operating voltage : 4.5V to 25V • Peak output current : IO+/IO–=0.8A /1A • Fast switching time (30ns typical at 1000pF load) • Fully compatible input to TTL / CMOS (VIH=up to 2.6V, at VDD=4.5 to 25V) • Built-in input pull-down resistance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Supply Voltage Input Voltage Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDD VIN PD max Tj Tstg Conditions Ratings 0 to 25 GND--0.3 to VDD+0.3 0.