UF3C065080K3S
Description
This Si C FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on Si C JFET is co-packaged with a Si MOSFET to produce a normally-off Si C FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, Si C MOSFETs or Si superjunction devices. Available in the TO247-3 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads when used with remended RC-snubbers, and any application requiring standard gate drive.
Features
- Typical On-resistance RDS(on),typ of 80 m W
- Maximum Operating Temperature of 175 °C
- Excellent Reverse Recovery
- Low Gate Charge
- Low Intrinsic Capacitance
- ESD Protected, HBM Class 2
- Very Low Switching Losses (Required RC-snubber Loss Negligible under Typical Operating Conditions)
- This Device is Pb-Free, Halogen Free and is Ro HS pliant
Typical Applications
- EV Charging
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