Datasheet4U Logo Datasheet4U.com

UF3C170400B7S Datasheet Sic Cascode JFET

Manufacturer: onsemi

Overview: Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO-263-7, 1700 V,.

General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gatedrive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.

Available in the TO-263-7 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive.

Key Features

  • On-resistance RDS(on): 410 mW (Typ).
  • Operating Temperature: 175 °C (Max).
  • Excellent Reverse Recovery: Qrr = 70 nC.
  • Low Body Diode VFSD: 1.5 V.
  • Low Gate Charge: QG = 23.1 nC.
  • Low Intrinsic Capacitance.
  • ESD Protected: HBM Class 2 and CDM Class C3.
  • This Device is Halogen Free and RoHS Compliant with Exemption 7a, Pb-Free 2LI (on second level interconnection) Typical.

More Datasheets from onsemi

Part Number Description
UF3C120080K3S SiC Cascode JFET
UF3C120150K4S SiC Cascode JFET
UF3C065030B3 SiC Cascode JFET
UF3C065030K3S SiC Cascode JFET
UF3C065040K3S SiC Cascode JFET
UF3C065080K3S SiC Cascode JFET

UF3C170400B7S Distributor