UF3C170400B7S
Description
This Si C FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on Si C JFET is co-packaged with a Si MOSFET to produce a normally-off Si C FET device. The device’s standard gatedrive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, Si C MOSFETs or Si superjunction devices. Available in the TO-263-7 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads, and any application requiring standard gate drive.
Features
- On-resistance RDS(on): 410 m W (Typ)
- Operating Temperature: 175 °C (Max)
- Excellent Reverse Recovery: Qrr = 70 n C
- Low Body Diode VFSD: 1.5 V
- Low Gate Charge: QG = 23.1 n C
- Low Intrinsic Capacitance
- ESD Protected: HBM Class 2 and CDM Class C3
- This Device is Halogen Free and Ro HS pliant with Exemption
7a, Pb-Free 2LI (on second level interconnection)
Typical Applications
- Switching Power Supplies
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