UF3C170400B7S - SiC Cascode JFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	UF3C170400B7S
Manufacturer	ON Semiconductor
File Size	449.26 KB
Description	SiC Cascode JFET
Datasheet	UF3C170400B7S Datasheet
Additional preview pages of the UF3C170400B7S datasheet.

Product details

Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.The device’s standard gatedrive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices.Available in the TO-263-7 package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive l

Features

On-resistance RDS(on): 410 mW (Typ).
Operating Temperature: 175 °C (Max).
Excellent Reverse Recovery: Qrr = 70 nC.
Low Body Diode VFSD: 1.5 V.
Low Gate Charge: QG = 23.1 nC.
Low Intrinsic Capacitance.
ESD Protected: HBM Class 2 and CDM Class C3.
This Device is Halogen Free and RoHS Compliant with Exemption 7a, Pb-Free 2LI (on second level interconnection) Typical.

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Published: Apr 14, 2025 |