UG4SC075005L8S
Description onsemi’s UG4SC075005L8S "bo-FET" integrates both a 750 V
Si C JFET and a Low Voltage Si MOSFET into a single H-PDSO-F8 package. This innovative approach allows users to create circuitry that would enable a normally-off switch while leveraging the benefits of a normally-on Si C JFET. These benefits include ultra-low on-resistance (RDS(on)) to minimize conduction losses and the exceptional robustness characteristic of a simplified JFET device structure, making it capable of handling the high-energy switching required in circuit protection applications. For switch-mode power conversion application, this device provides separate access to the JFET and MOSFET gates for improved speed control and ease of paralleling multiple devices.
Features
- Single Digit RDS(on)
- Normally-off Capability
- Improved Speed Control
- Improved Parallel Device Operation (3+ FETs)
- Operating Temperature: 175 C (Max)
- High Pulse Current Capability
- Excellent Device Robustness
- Silver-Sintered Die...
