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UG4SC075005L8S - SiC Combo JFET

General Description

SiC JFET and a Low Voltage Si MOSFET into a single H-PDSO-F8 package.

This innovative approach allows users to create circuitry that would enable a normally-off switch while leveraging the benefits of a normally-on SiC JFET.

Key Features

  • Single Digit RDS(on).
  • Normally-off Capability.
  • Improved Speed Control.
  • Improved Parallel Device Operation (3+ FETs).
  • Operating Temperature: 175 C (Max).
  • High Pulse Current Capability.
  • Excellent Device Robustness.
  • Silver-Sintered Die Attach for Excellent Thermal Resistance.
  • Short Circuit Rated.
  • This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) Combo JFET – EliteSiC, Power N‐Channel, H‐PDSO‐F8, 750 V, 5.4 mohm UG4SC075005L8S Description onsemi’s UG4SC075005L8S "Combo-FET" integrates both a 750 V SiC JFET and a Low Voltage Si MOSFET into a single H-PDSO-F8 package. This innovative approach allows users to create circuitry that would enable a normally-off switch while leveraging the benefits of a normally-on SiC JFET. These benefits include ultra-low on-resistance (RDS(on)) to minimize conduction losses and the exceptional robustness characteristic of a simplified JFET device structure, making it capable of handling the high-energy switching required in circuit protection applications.