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UJ3D06506TS

Manufacturer: onsemi

UJ3D06506TS datasheet by onsemi.

UJ3D06506TS datasheet preview

UJ3D06506TS Datasheet Details

Part number UJ3D06506TS
Datasheet UJ3D06506TS-ONSemiconductor.pdf
File Size 343.39 KB
Manufacturer onsemi
Description 650V SiC Diode
UJ3D06506TS page 2 UJ3D06506TS page 3

UJ3D06506TS Overview

onsemi offers the 3rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175 °C maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements.

UJ3D06506TS Key Features

  • 175 °C Maximum Operating Junction Temperature
  • Easy Paralleling
  • Extremely Fast Switching not Dependent on Temperature
  • No Reverse or Forward Recovery
  • Enhanced Surge Current Capability, MPS Structure
  • Excellent Thermal Performance, Ag Sintered
  • 100% UIS Tested
  • This Device is Pb-Free, Halogen Free and is ROHS pliant

UJ3D06506TS from other manufacturers

View UJ3D06506TS datasheet index

Brand Logo Part Number Description Other Manufacturers
UnitedSiC Logo UJ3D06506TS SiC Schottky Diode UnitedSiC
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