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UJ4N075004L8S - SiC JFET

General Description

Gen 4 normally-on SiC JFET transistor.

Key Features

  • Single Digit On-Resistance in a H-PDSO-F8 SMDpackage.
  • Operating Temperature: 175 C (Max).
  • High Pulse Current Capability.
  • Excellent Device Robustness.
  • Silver-Sintered Die Attach for Excellent Thermal Resistance.
  • Short Circuit Rated.
  • This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Carbide (SiC) JFET – EliteSiC, Power N-Channel, H-PDSO-F8, 750 V, 4.3 mohm UJ4N075004L8S Description onsemi’s UJ4N075004L8S is a 750 V, 4.3 mW high-performance Gen 4 normally-on SiC JFET transistor. This device exhibits ultra-low on resistance (RDS(on)) in a compact H-PDSO-F8 package, making it an ideal fit to address the challenging thermal and space constraints of solid-state circuit breakers and relay applications. Additionally, the JFET is a robust device technology capable of the high-energy switching required in circuit protection applications.