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UJ4SC075005L8S - 750V SiC JFET

General Description

The UJ4SC075005L8S is a 750 V, 5.4 mW G4 SiC FET.

on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Key Features

  • On-resistance RDS(on): 5.4 mW (Typ).
  • Operating Temperature: 175 °C (Max).
  • Excellent Reverse Recovery: Qrr = 440 nC.
  • Low Body Diode VFSD: 1.03 V.
  • Low Gate Charge: QG = 164 nC.
  • Threshold Voltage VG(th): 4.7 V (Typ) Allowing 0 to 15 V Drive.
  • Low Intrinsic Capacitance.
  • ESD Protected, HBM Class 2.
  • H-PDSO-F8 Package for Faster Switching, Clean Gate Waveforms.
  • This Device is Pb-Free, Halogen Free and is RoHS Comp.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, H‐PDSO‐F8, 750 V, 5.4 mohm UJ4SC075005L8S Description The UJ4SC075005L8S is a 750 V, 5.4 mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving H-PDSO-F8 package which enables automated assembly, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.