UJ4SC075005L8S Description
The UJ4SC075005L8S is a 750 V, 5.4 mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs.
UJ4SC075005L8S Key Features
- On-resistance RDS(on): 5.4 mW (Typ)
- Operating Temperature: 175 °C (Max)
- Excellent Reverse Recovery: Qrr = 440 nC
- Low Body Diode VFSD: 1.03 V
- Low Gate Charge: QG = 164 nC
- Threshold Voltage VG(th): 4.7 V (Typ) Allowing 0 to 15 V Drive
- Low Intrinsic Capacitance
- ESD Protected, HBM Class 2
- H-PDSO-F8 Package for Faster Switching, Clean Gate Waveforms
- This Device is Pb-Free, Halogen Free and is RoHS pliant