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UJ4SC075011K4S - SiC JFET

General Description

The UJ4SC075011K4S is a 750 V, 11 mW G4 SiC FET.

on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Key Features

  • On-Resistance RDS(on) : 11 mW (typ).
  • Operating Temperature: 175 °C (Max).
  • Excellent Reverse Recovery: Qrr = 288 nC.
  • Low Body Diode VFSD: 1.1 V.
  • Low Gate Charge : QG = 75 nC.
  • Threshold Voltage VG(th): 4.5 V (typ) Allowing 0 to 15 V Drive.
  • Low Intrinsic Capacitance.
  • ESD Protected: HBM Class 2.
  • TO-247-4L Package for Faster Switching, Clean Gate Waveforms.
  • This Device is Pb-Free, Halogen Free and is RoHS Compl.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO-247-4L, 750 V, 11 mohm SiC JFET w/ Si MOSFET UJ4SC075011K4S Description The UJ4SC075011K4S is a 750 V, 11 mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.