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UMZ1NT1 - Complementary Dual General Purpose Amplifier Transistor

Key Features

  • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating.
  • Human Body Model: 3A ESD Rating.
  • Machine Model: C Pb.
  • Free Package is Available (6) (5) (4) Q1 Q2 (1) (2) (3).

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Datasheet Details

Part number UMZ1NT1
Manufacturer onsemi
File Size 94.45 KB
Description Complementary Dual General Purpose Amplifier Transistor
Datasheet download datasheet UMZ1NT1 Datasheet

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UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A ESD Rating − Machine Model: C Pb−Free Package is Available (6) (5) (4) Q1 Q2 (1) (2) (3) MAXIMUM RATINGS (TA = 25°C) Rating Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 60 50 7.0 Unit Vdc Vdc Vdc SC−88 CASE 419B 1 www.DataSheet4U.