• Part: UMZ1NT1
  • Description: Complementary Dual General Purpose Amplifier Transistor
  • Category: Transistor
  • Manufacturer: onsemi
  • Size: 94.45 KB
Download UMZ1NT1 Datasheet PDF
onsemi
UMZ1NT1
Features - - - - - High Voltage and High Current: VCEO = 50 V, IC = 200 m A High h FE: h FE = 200X400 Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: 3A ESD Rating - Machine Model: C Pb- Free Package is Available (6) (5) (4) Q1 Q2 (1) (2) (3) MAXIMUM RATINGS (TA = 25°C) Rating Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current - Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 60 50 7.0 Unit Vdc Vdc Vdc SC- 88 CASE 419B 1 .. 200 m Adc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead Junction and Storage Temperature MARKING DIAGRAM Symbol PD Max 187 (Note 1) 256 (Note 2) 1.5 (Note 1) 2.0 (Note 2) 670 (Note 1) 490 (Note 2) Max 250 (Note 1) 385 (Note 2) 2.0...