Click to expand full text
VEC2616
Power MOSFET 60V, 80mΩ, 3A, –60V, 137mΩ, –2.5A, Complementary
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.
Features • Low On-Resistance • 4V drive • Low-Profile Package • Complementary N-Channel and P-Channel MOSFET • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance
Typical Applications • Motor Driver
SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol N-Channel P-Channel Unit
Drain to Source Voltage
VDSS
60 −60 V
Gate to Source Voltage
VGSS
±20 ±20 V
Drain Current (DC)
ID 3 −2.
VEC2616 Datasheet
