VEC2616 Description
VEC2616 Power MOSFET 60V, 80mΩ, 3A, 60V, 137mΩ, 2.5A, plementary This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.
VEC2616 Key Features
- Low On-Resistance
- 4V drive
- Low-Profile Package
- plementary N-Channel and P-Channel MOSFET
- ESD Diode-Protected Gate
- Pb-Free, Halogen Free and RoHS pliance