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WPB4002 - N-Channel Power MOSFET

Features

  • Reverse recovery time trr=115ns (typ).
  • Input capacitance Ciss=2200pF (typ).
  • ON-resistance RDS(on)=0.28Ω (typ) Specifications.
  • 10V drive TO-3P-3L Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Source to Drain Diode Forward Current (DC) Source to Drain Diode Forward Current (Pulse) VDSS VGSS ID IDP ISD ISDP Allowable Power Dissipation PD Channel Temperature.

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Datasheet Details

Part number WPB4002
Manufacturer onsemi
File Size 168.68 KB
Description N-Channel Power MOSFET
Datasheet download datasheet WPB4002 Datasheet

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Full PDF Text Transcription

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Ordering number : ENA1769A WPB4002 N-Channel Power MOSFET 600V, 23A, 0.36Ω, TO-3P-3L http://onsemi.com Features • Reverse recovery time trr=115ns (typ) • Input capacitance Ciss=2200pF (typ) • ON-resistance RDS(on)=0.28Ω (typ) Specifications • 10V drive TO-3P-3L Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Source to Drain Diode Forward Current (DC) Source to Drain Diode Forward Current (Pulse) VDSS VGSS ID IDP ISD ISDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=50V, L=1mH, IAV=17A (Fig.
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