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WPH4003 - N-Channel Power MOSFET

Features

  • ON-resistance RDS (on) =8.2Ω (typ. ).
  • Input Capacitance Ciss=850pF (typ. ).
  • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1700 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) IDc.
  • 1 IDpack.
  • 2 Limited only maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition).
  • 3 3 A 2.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 6.

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Datasheet Details

Part number WPH4003
Manufacturer onsemi
File Size 302.77 KB
Description N-Channel Power MOSFET
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Ordering number : ENA1967A WPH4003 N-Channel Power MOSFET 1700V, 3A, 10.5Ω, TO-3PF-3L http://onsemi.com Features • ON-resistance RDS (on) =8.2Ω (typ.) • Input Capacitance Ciss=850pF (typ.) • 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 1700 V Gate-to-Source Voltage VGSS ±30 V Drain Current (DC) IDc*1 IDpack*2 Limited only maximum temperature Tch=150°C Tc=25°C (Our ideal heat dissipation condition) *3 3 A 2.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 6 A Allowable Power Dissipation PD Tc=25°C 3.
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