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MCR12N - Silicon Controlled Rectifiers

Key Features

  • r>.
  • 7143 (Mon.
  • Fri 8:00am to 5:00pm MST) Email: ONlit.
  • spanish@hibbertco. com ASIA/.

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Datasheet Details

Part number MCR12N
Manufacturer ON
File Size 92.77 KB
Description Silicon Controlled Rectifiers
Datasheet download datasheet MCR12N Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MCR12D, MCR12M, MCR12N Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave silicon gate–controlled devices are needed. • Blocking Voltage to 800 Volts • On–State Current Rating of 12 Amperes RMS at 80°C • High Surge Current Capability — 100 Amperes • Rugged, Economical TO220AB Package • Glass Passivated Junctions for Reliability and Uniformity • Minimum and Maximum Values of IGT, VGT an IH Specified for Ease of Design • High Immunity to dv/dt — 100 V/µsec Minimum at 125°C • Device Marking: Logo, Device Type, e.g.