MGY25N120 - Insulated Gate Bipolar Transistor

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MGY25N120 Insulated Gate Bipolar Transistor by ON - Datasheet Preview — Datasheet preview – MGY25N120

Datasheet Details

Part number	MGY25N120
Manufacturer	ON
File Size	153.59 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	MGY25N120 Datasheet
Additional preview pages of the MGY25N120 datasheet.

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGY25N120/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operation at high frequencies.

Published: Apr 27, 2005 |