MJ14001 Overview
MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current plementary Silicon Power Transistors Designed for use in high−power amplifier and switching circuit applications. • High Current Capability − IC Continuous = 60 Amperes • DC Current Gain − hFE = 15−100 @ IC = 50 Adc • Low Collector−Emitter Saturation Voltage −VCE(sat) = 2.5 Vdc (Max) 60 AMPERE PLEMENTARY SILICON POWER TRANSISTORS 60−80 VOLTS, 300 WATTS MARKING DIAGRAM MJ1400xG AYYWW MEX
MJ14001 Key Features
- High Current Capability
- IC Continuous = 60 Amperes
- DC Current Gain
- hFE = 15-100 @ IC = 50 Adc
- Low Collector-Emitter Saturation Voltage -VCE(sat) = 2.5 Vdc (Max)
- Pb-Free Packages are Available
- Continuous Base Current
- Continuous Emitter Current
- Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C
- For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering
