MJ14001 - COMPLEMENTARY SILICON POWER TRANSISTORS

Key Features

High Current Capability.
IC Continuous = 60 Amperes.
DC Current Gain.
hFE = 15.
100 @ IC = 50 Adc.
Low Collector.
Emitter Saturation Voltage.
VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc.
Pb.
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MJ14001 complementary silicon power transistors by ON - Datasheet Preview

Datasheet Details

Part number	MJ14001
Manufacturer	ON
File Size	90.62 KB
Description	COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet	MJ14001 Datasheet

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MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP) *Preferred Devices High−Current Complementary Silicon Power Transistors Designed for use in high−power amplifier and switching circuit applications. Features • High Current Capability − IC Continuous = 60 Amperes • DC Current Gain − hFE = 15−100 @ IC = 50 Adc • Low Collector−Emitter Saturation Voltage −VCE(sat) = 2.