Datasheet Summary
ON Semiconductort
NPN Silicon Power Transistors
SWITCHMODEt Bridge Series
. . . specifically designed for use in half bridge and full bridge off line converters.
- Excellent Dynamic Saturation Characteristics
- Rugged RBSOA Capability
- Collector- Emitter Sustaining Voltage
- VCEO(sus)
- 400 V
- Collector- Emitter Breakdown
- V(BR)CES
- 650 V
- State- of- Art Bipolar Power Transistor Design
- Fast Inductive Switching: tfi = 25 ns (Typ) @ 100_C tc = 50 ns (Typ) @ 100_C tsv = 1 µs (Typ) @ 100_C
- Ultrafast FBSOA Specified
- 100_C Performance Specified for:
RBSOA
Inductive Load Switching
Saturation Voltages
Leakages
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