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MJE271 - COMPLEMENTARY POWER DARLINGTON TRANSISTORS

Key Features

  • High Safe Operating Area.
  • Collector.
  • Emitter Sustaining Voltage.
  • High DC Current Gain VCEO(sus) = 100 Vdc (Min) hFE @ 120 mA, 10 V = 1500 (Min) IS/B @ 40 V, 1.0 s = 0.375 A http://onsemi. com ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ.

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Datasheet Details

Part number MJE271
Manufacturer ON
File Size 84.82 KB
Description COMPLEMENTARY POWER DARLINGTON TRANSISTORS
Datasheet download datasheet MJE271 Datasheet

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www.DataSheet4U.com MJE270 (NPN), MJE271 (PNP) Complementary Silicon Power Transistors Features • High Safe Operating Area • Collector−Emitter Sustaining Voltage • High DC Current Gain VCEO(sus) = 100 Vdc (Min) hFE @ 120 mA, 10 V = 1500 (Min) IS/B @ 40 V, 1.0 s = 0.375 A http://onsemi.