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MJH6284 (NPN), MJH6287 (PNP)
Darlington Complementary Silicon Power Transistors
These devices are designed for general−purpose amplifier and low−speed switching motor control applications.
Features
• Similar to the Popular NPN 2N6284 and the PNP 2N6287 • Rugged RBSOA Characteristics • Monolithic Construction with Built−in Collector−Emitter Diode • These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous
− Peak
Symbol VCEO VCB VEB IC
Max 100 100 5.0 20 40
Unit Vdc Vdc Vdc Adc
Base Current
IB
Total Device Dissipation @ TC = 25_C
PD
Derate above 25_C
0.5
Adc
160
W
1.