MJL4302A - Complementary NPN-PNP Silicon Power Bipolar Transistors

Datasheet Details

Part number	MJL4302A
Manufacturer	ON
File Size	92.88 KB
Description	Complementary NPN-PNP Silicon Power Bipolar Transistors
Datasheet	MJL4302A Datasheet

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MJL4281A (NPN) MJL4302A (PNP) Preferred Device Complementary NPN−PNP Silicon Power Bipolar Transistors The MJL4281A and MJL4302A are PowerBaset power transistors for high power audio. http://onsemi.com • 350 V Collector−Emitter Sustaining Voltage • Gain Complementary: Gain Linearity from 100 mA to 5 A High Gain − 80 to 240 hFE = 50 (min) @ IC = 8 A Low Harmonic Distortion High Safe Operation Area − 1.0 A/100 V @ 1 Second High fT • • • 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS 230 WATTS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.