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NIF5002NT1 - Self-Protected FET

Datasheet Summary

Features

  • Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain.
  • to.
  • Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate.
  • to.
  • Source Clamp. Current Limitation Thermal Shutdown with Automatic Restart Short Circuit Prote.

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Datasheet Details

Part number NIF5002NT1
Manufacturer ON
File Size 58.08 KB
Description Self-Protected FET
Datasheet download datasheet NIF5002NT1 Datasheet
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Full PDF Text Transcription

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NIF5002N Preferred Device Self−Protected FET with Temperature and Current Limit 42 V, 2.0 A, Single N−Channel, SOT−223 HDPlus™ devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp.
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