NTD23N03R Description
NTD23N03R Power MOSFET 23 Amps, 25 Volts, N−Channel DPAK.
NTD23N03R Key Features
- Pb-Free Packages are Available Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Los
- Continuous Thermal Resistance, Junction-to-Case Total Power Dissipation @ T C = 25°C Drain Current
- Continuous @ TC = 25°C, Chip
- Continuous @ TC = 25°C, Limited by Package
- Single Pulse Thermal Resistance, Junction-to-Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current
- Continuous @ TA = 25°C Thermal Resistance, Junction-to-Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Curren
- Rev. 4