FDG6317NZ Description
This dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely Iow RDS(ON) and gate charge (QG) in a small package.
FDG6317NZ Key Features
- 0.7 A, 20 V
- Gate-Source Zener for ESD Ruggedness. HBM Class 1C
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(ON)
- pact Industry Standard SC70-6 Surface Mount Package
- These Devices are Pb-Free and are RoHS pliant