FDG6320C Description
These dual N & P−Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology, this very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors...
FDG6320C Key Features
- N-Ch 0.22 A, 0.25 V
- RDS(ON) = 4.0 W @ VGS = 4.5 V
- RDS(ON) = 5.0 W @ VGS = 2.7 V
- P-Ch -0.14 A, -25 V
- RDS(ON) = 10 W @ VGS = -4.5 V
- RDS(ON) = 13 W @ VGS = -2.7 V
- Very Small Package Outline SC70-6
- Very Low Level Gate Drive Requirements Allowing Direct
- Gate-Source Zener for ESD Ruggedness (>6 kV Human Body
- These Devices are Pb-Free and are RoHS pliant