FDH44N50
Overview
- Low Gate Charge Qg Results in Simple Drive Requirement (Typ. 90 nC)
- Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness
- Reduced RDS(on) (110 mW (Typ.) @ VGS = 10 V, ID = 22 A)
- Reduced Miller Capacitance and Low Input Capacitance (Typ. Crss = 40 pF)
- Improved Switching Speed with Low EMI
- 175°C Rated Junction Temperature
- This Device is Pb-Free and is RoHS Compliant
