FDMC86265P Description
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been optimized for the on−state resistance and yet maintain superior switching performance.
FDMC86265P Key Features
- Max rDS(on) = 1.2 W at VGS = -10 V, ID = -1 A
- Max rDS(on) = 1.4 W at VGS = -6 V, ID = -0.9 A
- Very Low RDS-On Mid Voltage P-Channel Silicon Technology
- This Product is Optimized for Fast Switching