FDS9926A Description
These N−Channel 2.5 V specified MOSFETs use onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V 10 V).
FDS9926A Key Features
- 6.5 A, 20 V. RDS(ON) = 30 mW @ VGS = 4.5 V
- Optimized for Use in Battery Protection Circuits
- Low Gate Charge
- This Device is Pb-Free and Halide Free