FOD852 Description
The FOD852 consists of gallium arsenide infrared emitting diode driving a silicon photodarlington output (with integral base-emitter resistor) in a 4-pin dual in-line package. Functional Block Diagram ANODE 1 4 COLLECTOR CATHODE 2 3 EMITTER Figure 1. Package Outlines ©2006 Fairchild Semiconductor Corporation FOD852 Rev.
FOD852 Key Features
- High Current Transfer Ratio: 1000% Minimum
- Safety and Regulatory Approvals
- UL1577, 5,000 VACRMS for 1 Minute
- DIN EN/IEC60747-5-5