FQB5N90 Description
ID = 2.7 A This N-Channel enhancement mode power MOSFET is Low Gate Charge (Typ. 31 nC) produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET Low Crss (Typ.
FQB5N90 Key Features
- 5.4 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V
- Low Gate Charge (Typ. 31 nC)
- Low Crss (Typ. 13 pF)
- 100% Avalanche Tested
- RoHS pliant