MBR1100 Description
Axial Lead Rectifier MBR1100 These rectifiers employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry.
MBR1100 Key Features
- Low Reverse Current
- Low Stored Charge, Majority Carrier Conduction
- Low Power Loss/High Efficiency
- Highly Stable Oxide Passivated Junction
- Guard-Ring for Stress Protection
- Low Forward Voltage
- 175C Operating Junction Temperature
- High Surge Capacity
- These Devices are Pb-Free and are RoHS pliant
- Case: Epoxy, Molded