MJD128T4G Description
MJD128T4G (PNP) Preferred Device plementary Darlington Power Transistor DPAK For Surface Mount Applications.
MJD128T4G Key Features
- Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation- @ TA = 25°C Derate above 25°
MJD128T4G Applications
- Monolithic Construction With Built−in Base−Emitter Shunt Resistors