MTP2P50EG Description
MTP2P50EG Power MOSFET 2 Amps, 500 Volts, P−Channel TO−220 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time.
MTP2P50EG Key Features
- Robust High Voltage Termination
- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time parable to a Discrete
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- This is a Pb-Free Device
- Continuous
- Non-Repetitive (tp ≤ 10 ms)
- Continuous Drain Current
- Continuous @ 100°C Drain Current