NTJS4151P Description
DATA SHEET .onsemi. MOSFET Power, Single, P-Channel, Trench, SC-88 -20 V, -4.2 A NTJS4151P V(BR)DSS −20 V RDS(on) Typ 47 mW @ −4.5 V 70 mW @ −2.5 V 180 mW @ −1.8 V ID Max −4.2 A SC−88.
NTJS4151P Key Features
- Leading Trench Technology for Low RDS(ON) Extending Battery Life
- SC-88 Small Outline (2x2 mm) for Maximum Circuit Board
- Gate Diodes for ESD Protection
- Pb-Free Package is Available