NVLJWD023N04CL Description
MOSFET Power, Dual N-Channel 40 V, 23 mW, 25 A NVLJWD023N04CL.
NVLJWD023N04CL Key Features
- Small Footprint for pact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- Wettable Flank Option for Enhanced Optical Inspection
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are RoHS pliant
- 55 to °C +175
- Steady State
- Steady State (Note 2) RqJA
- Rev. 1